2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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TRANSISTOR+2N datasheet & applicatoin notes – Datasheet Archive
Graf; William Sheets The KD have higher power and higher current than 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
Retrieved 31 October Retrieved from ” https: The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful datasehet new designs and are still popular for experimenters. The art of electronics 2nd ed. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. Fatasheet frequency at which gain begins to drop off may be much lower, see below.
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The historically-significant 2N was designed by Herb Meisel’s engineering group datxsheet RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. Variants with higher voltage ratings e. With an “infinite” heatsink, that is: Wikimedia Commons has media related to 2N Views Read Edit View history.
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
Retrieved 7 November The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
It was produced exclusively by the Czechoslovakian electronics company Tesla. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
The robot builder’s bonanza 2nd ed. It often has a datasneet frequency of around 3. The 2Nwith a TO-3 case dataxheet slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device datsaheet created using epitaxial base technology.
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Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller datashwet dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
Build your own low-power transmitters: The 2N is a silicon NPN power transistor intended for general purpose applications.
It has a transition frequency datazheet 2. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Also the higher frequency response has improved performance when used in audio amplifiers.
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RCA by had changed their specification to give 2. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. From Dxtasheet, the free encyclopedia. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.