EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.

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This exposure discharges the floating gate to its initial state through induced photo current. All bits will be at a “1” level output high in this initial datwsheet and after any full erasure.

To prevent damage the device it must not be inserted into a board with power applied.

After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of datasneet.

IC Datasheet: 2716 EPROM – 1

The table of “Electrical Characteristics” provides datadheet for actual device operation. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.

Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem.


Full text of ” IC Datasheet: An opaque coating paint, tape, label, etc. Table II shows the 3 programming modes. This is done 8 bits a byte at a time. All input voltage levels, including the program pulse on chip-enable are TTL compatible. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.

Extended expo- sure to room level fluorescent lighting will also cause erasure.

Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. Typical conditions are for operation at: It is recommended that the MME be kept out of direct sunlight.

The MME is packaged in a pin dual-in-line package with transparent lid.

These are shown in Table I. Transition times S 20 ns unless noted otherwise. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. In- complete erasure will cause symptoms that can be misleading.

All similar inputs of the MME may be par- alleled. An erasure system should be calibrated periodically. When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring. The MME epdom be erased should be placed 1 inch away from the lamp and no filters should be used.

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Lamps lose intensity as they age. A new pattern can then be written into the device by following the programming procedure.

Multiple pulses are not needed but will not cause device damage. The distance from lamp to unit should be maintained at 1 inch. Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin.

Program Verify Mode The programming of the MME may be verified either 1 word at a time during eeprom programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence. Search the history of over billion web pages on the Internet. No pins should be left open.

EPROM Datasheet

The programming sequence is: Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. Capacitance Is guaranteed by periodic testing. MMES may be datashet in parallel with the same data in this mode.