3N80 Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate . 3NTF3-T Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low . 3N80 Datasheet PDF Download – N-Channel MOSFET Transistor, 3N80 data sheet.

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Channel length also affects transconductance. Brands Line Card Manufacturers. We urf a franchised distributor of electronic components, as well as a sourcing and procurement agent for hard-to-find, obsolete, and allocated parts.

3N80 Datasheet PDF ( Pinout ) – N-Channel MOSFET Transistor

MOSFETs can also be paralleled easily because the forward voltage drop increases with increasing temperature, ensuring an even distribution of current among all components. These are normally negligible in high voltage devices but can become significant in low voltage devices. In addition, we provide excess inventory consignment, electronic engineering and product design services, prototyping, contract manufacturing, handheld portable computing products, and software application development services.

Current-Voltage undergoing destructive failure due to second breakdown. Another BJT limitation is that both electrons and holes contribute to conduction.

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Whatever your manufacturing need, come to 1-Source to buy electric components from the leading electronic component distributors and electronic component suppliers! The base resistance RB must be minimized through careful design of the doping and distance under the source region. When a voltage ramp appears across the drain and source lrf of the device a current I1 flows through the gate resistance, RG, by means of the gate-drain capacitance, CGD.

This makes it more attractive to use the bipolar power transistor at the expense of worse high frequency performance. A large base drive current as high as one-fifth of the collector current is required to keep the device in the ON state. This continues until time t3.


Two related Oxide Gate phenomena can occur in Oxide poorly designed and processed devices: For example, a device with a gate charge of 20nC can be turned on in 20? Also, BJTs suffer from thermal runaway. The data sheet capacitances are defined in terms of the equivalent circuit capacitances as: The second part is the capacitance associated with the n380 region immediately under the 3h80.

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We are well known for our great prices, great selection, and as the leading online source for hard-to-find and hard-to-buy electronic component parts.

Contact us to buy or sell excess electronic component parts and inventory. CGD consists of two parts, the first is the capacitance associated with the overlap of the polysilicon gate and the silicon underneath in the JFET region. RG is the distributed resistance of the gate and is approximately inversely proportional to active area.

For drain voltages below BVDSS and with no bias on the D gate, no channel is a formed under the gate at the surface and the drain Source Source voltage is entirely Gate supported by the reverse-biased body-drift p-n junction. Krf, CDS, the capacitance associated with the body-drift diode, varies inversely with the square root of the drain-source bias. Consignment and warehousing available.

3N80 Datasheet PDF – Inchange Semiconductor

The metal oxide semiconductor field effect transistor MOSFET is based on the original field-effect transistor introduced in the 70s. It is give by Pd where: There are tradeoffs to be made between RDS on that requires shorter channel lengths and punch-through avoidance that requires longer channel lengths.

Their forward voltage drop decreases with increasing temperature causing diversion of current to a single device when several MOS 380 are paralleled. Good circuit design practice dictates the use of a higher gate voltage than the bare minimum required for switching and therefore the gate charge used in the calculations is QG corresponding to t4.

Cell density has increased over the years from around half a million per square inch in to around eight million for planar MOSFETs and around 12 million for the trench technology. The reach-through phenomenon occurs when the depletion region on the drift side of the body-drift p-n junction reaches the epilayer-substrate interface before avalanching takes place in the epi.


Common values are Figure 7. BVDSS is normally measured at ? They 0 are superior to the BJTs in high frequency applications where 1 10 switching power losses are important.

Power Transistors RF Transistor. Power mosfet basics IR If this b rate is exceeded then the voltage across the gate-source terminals may become higher Figure Plus, they can withstand Maximum Current A simultaneous application of high current and voltage without Figure 2.

Maximum values of 1. Presence of holes with their higher carrier lifetime causes the switching speed to be several orders of magnitude slower than for a power MOSFET of similar size and Bipolar Transistors voltage rating.

Typical values of input Cissoutput Coss and reverse transfer Crss capacitances given krf the data sheets are used by circuit designers as a starting point in determining circuit component values. The parasitic BJT can make the device susceptible to unwanted device turn-on and premature 3n880. Reduced channel 3n880 is beneficial to both gfs and on-resistance, with punch-through as a tradeoff.

Although it is not possible to define absolutely the operating boundaries of a power device, we will loosely refer to the power ief as any device that can switch at least 1A. The leakage current flowing between source and drain is denoted by IDSS. The 1-Source Electronics group of companies provides a full suite of services to the electronics manufacturing industry.

Grant and John Gower. Finally the lower the gate oxide thickness the higher gfs. Vth is usually measured at a drain-source current of ?